PART |
Description |
Maker |
2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET MOS Field Effect Transistor N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
IRFU214B IRFR214B IRFU214BTUFP001 IRFR214BTMFP001 |
250V N-Channel MOSFET 250V N-Channel B-FET / Substitute of IRFU214 & IRFU214A 250V N-Channel B-FET / Substitute of IRFR214 & IRFR214A
|
http:// Intersil Corporation FAIRCHILD[Fairchild Semiconductor]
|
IRFS624B IRF624B IRF624 IRF624BFP001 IRFS624BFP001 |
250V N-Channel B-FET / Substitute of IRFS624 & IRFS624A 250V N-Channel B-FET / Substitute of IRF624 & IRF624A 250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00 |
From old datasheet system P-CHANNEL MOS FET FOR HIGH SWITCHING P-channel MOS FET (-30V, -2A)
|
NEC[NEC]
|
UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor
|
NEC[NEC]
|
2SK2070 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING N沟道场效应晶体管的高速开 MOS Field Effect Transistor
|
NEC, Corp. NEC[NEC]
|
2SJ559 2SJ559-T1 |
Pch enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
2SJ518 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ517 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
IRF644B IRFS644B IRF644 IRF644BFP001 |
250V N-Channel MOSFET 250V N-Channel B-FET / Substitute of IRF644 & IRF644A
|
FAIRCHILD[Fairchild Semiconductor]
|